
Researchers find that hyper-doped epitaxial Ge films become superconductors at cryogenic temperatures.
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(Image credit: Patrick Strohbeen / NYU) Researchers at NYU and the University of Queensland have demonstrated superconductivity in gallium-doped epitaxial germanium, fabricated using industry-standard semiconductor tools. The new material switches to a superconducting state below 3.5 Kelvin and supports dense, wafer-scale Josephson junction arrays, an important building block for quantum and cryogenic RF circuits.
The team’s prototype demonstrates millions of superconducting junctions integrated on a single 2-inch wafer. Junctions were lithographically defined and electrically characterized at low temperatures, confirming both superconducting behavior and practical current densities for device integration.
The process relies on molecular beam epitaxy to grow ultra-clean germanium films with gallium dopants inserted directly into substitutional lattice sites. At sufficiently high doping concentrations, the films undergo a bulk superconducting transition. Crucially, the interface remains epitaxial and free of disordered interlayers, which are known to degrade junction performance in hybrid stacks.
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Reference reading
- https://www.tomshardware.com/tech-industry/semiconductors/SPONSORED_LINK_URL
- https://www.tomshardware.com/tech-industry/semiconductors/researchers-create-superconductive-germanium-using-standard-chip-fabrication-techniques#main
- https://www.tomshardware.com
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